YORKTOWN HEIGHTS, NY – 18 Aug 2008:  IBM (NYSE: IBM) and its joint development partners — AMD, Freescale, STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering (CNSE) — today announced the first working static random access memory (SRAM) for the 22 nanometer (nm) technology node, the world’s first reported working cell built at its 300mm research facility in Albany, NY.
SRAM chips are precursors to more complex devices such as microprocessors.
The SRAM cell utilizes a conventional six-transistor design and has an area of 0.1um2, breaking the previous SRAM scaling barriers.
Researchers achieved this breakthrough at CNSE of the University at Albany, State University of New York. CNSE’s Albany NanoTech is the world’s most advanced university …