IBM has successfully developed a prototype of the semiconductor industry’s smallest, densest and fastest on-chip dynamic memory device in next-generation, 32-nanometer, silicon-on-insulator (SOI) technology that can offer improved speed, power savings and reliability for products ranging from servers to consumer electronics.
IBM’s SOI technology can provide up to a 30 percent chip performance improvement and 40 percent power reduction, compared to standard bulk silicon technology. SOI protects the transistors on the chip with a “blanket” of insulation that reduces electrical leakage, saving power and allowing current to flow through the circuit more efficiently, improving performance.
IBM has fabricated a test chip with an embedded dynamic random access memory (eDRAM) technology that features the industry’s smallest memory cell, …